TK4P60DB switching regulator applications ? low drain-source on-resistance: r ds (on) = 1.6 (typ.) ? high forward transfer admittance: ? y fs ? = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 600 v) ? enhancement-mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v dc (note 1) i d 3.7 drain current pulse (t = 1 ms) (note 1) i dp 14.8 a drain power dissipation (tc = 25c) p d 80 w single pulse avalanche energy (note 2) e as 147 mj avalanche current i ar 3.7 a repetitive avalanche energy (note 3) e ar 8 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precaut ions?/?derating concept and methods?) and individual reliability data (i.e. reliabilit y test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 1.56 c/w thermal resistance, channel to ambient r th (ch-a) 125 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 18.7 mh, r g = 25 , i ar = 3.7 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm + 0.25 ? 0.12 1.52 6.1 0.12 5.34 0.13 2.29 1 3 + 0.4 ? 0.6 10.0 6.6 0.2 2 0.76 0.12 1.14max 1.01max 2.3 0.1 0.58max 0.07 0.07 1.08 0.2 1. gate 2. drain heat sink 3. source jedec ? jeita ? toshiba 2-7k1a weight : 0.36 g (typ.) 1 3 2 silicon n channel mos type ( -mos ) www.freescale.net.cn www.freescale.net.cn 1/5
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.4 ? 4.4 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 1.9 a ? 1.6 2.0 forward transfer admittance ? y fs ? v ds = 10 v, i d = 1.9 a 0.6 2.2 ? s input capacitance c iss ? 540 ? reverse transfer capacitance c rss ? 3 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 60 ? pf rise time t r ? 18 ? turn-on time t on ? 40 ? fall time t f ? 8 ? switching time turn-off time t off ? 55 ? ns total gate charge q g ? 11 ? gate-source charge q gs ? 6 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 3.7 a ? 5 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 3.7 a pulse drain reverse current (note 1) i drp ? ? ? 14.8 a forward voltage (diode) v dsf i dr = 3.7 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 1000 ? ns reverse recovery charge q rr i dr = 3.7 a, v gs = 0 v, di dr /dt = 100 a/ s ? 5.5 ? c marking (note 4) note 4: TK4P60DB lot no. part no. (or abbreviation code) * weekly code: (four digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last 2digits of the calendar year) 0 v 10 v v gs v dd 200 v i d = 1.9.a v out 50 duty 1%, t w = 10 s r l = 105 www.freescale.net.cn www.freescale.net.cn 2/5
0.1 0.1 1 10 1 100 10 0.1 10 0.1 1 25 100 tc = ? 55 c 10 1 0 8 12 16 20 0 i d = 3.7 a 4 8 12 16 20 1 1.9 4 10 0 0 2 4 6 8 1.6 8 tc = ? 55 c 25 100 3.2 4.8 6.4 8 6.4 4.8 3.2 0 0 20 40 50 v gs = 5.5v 7.5 10 8 30 10 7 6.5 6 1.6 5 4 2 1 0 0 2 4 6 8 10 v gs = 5 v 5.5 6 6.5 7 8 10 3 common source tc = 25c pulse test i d ? v ds i d ? v ds i d ? v gs v ds ? v gs common source tc = 25c pulse test |y fs | ? i d r ds (on) ? i d drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on-resistance r ds (on) ( ) drain-source voltage v ds (v) forward transfer admittance |y fs | (s) common source tc = 25c pulse test common source v gs = 10 v tc = 25c pulse test common source v ds = 20 v pulse test common source v ds = 20 v pulse test www.freescale.net.cn www.freescale.net.cn 3/5
0 4 8 v dd = 100 v v ds v gs 400 200 12 16 500 400 300 200 100 0 20 16 12 8 4 0 20 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 ? 0.3 1 100 ? 0.6 ? 0.9 v gs = 0 v 10 3 1 5 ? 1.2 ? 1.5 10 160 ? 40 0 40 80 120 ? 80 5 3 2 1 0 i d = 1 a 1.9 3.7 4 v th ? tc r ds (on) ? tc i dr ? v ds 100 0 0 40 80 120 160 40 60 80 20 p d ? tc common source tc = 25c pulse test common source v gs = 0 v f =1mhz tc = 25c common source v ds = 10 v i d = 1ma pulse test case temperature tc (c) gate threshold voltage v th (v) case temperature tc (c) total gate charge q g (nc) capacitance c (pf) c ? v ds drain-source voltage v ds (v) drain-source on-resistance r ds (on) ( ) case temperature tc (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source i d = 3.7 a tc = 25c pulse test common source v gs = 10 v pulse test www.freescale.net.cn www.freescale.net.cn 4/5
0.001 0.01 1 10 100 10 1000 100 100 s * 1 ms * 0.1 1 10 0.1 1 10 100 1m 10m 100m 1 10 t p dm t duty = t/t r th (ch-c) = 1.56 c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 18.7 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch-c) pulse width t w (s) safe operating area drain current i d (a) drain-source voltage v ds (v) * single pulse tc=25 curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max ( continuous ) avalanche energy e as (mj) channel temperatur e (initial) t ch (c) test circuit waveform dc operation tc = 25c 200 160 120 80 40 0 25 50 75 100 125 150 v dss max www.freescale.net.cn www.freescale.net.cn 5/5
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